* High breakdown voltage, BVCEO≥ 200V
* Large continuous collector current capability
* Low collector saturation voltage
* Complementary to BTA1201M3
* Pb-free lead plating and halogen-free package Symbol BTC2881M3 Outline SOT-89 B：Base C：Collector E：Emitt
BTC2881M3 Datasheet (272.06 KB)
BTC2881M3
CYStech
272.06 KB
General purpose npn epitaxial planar transistor.
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881M3 BVCEO IC RCESAT(MAX) Spec. No. : C316M3 Issued Date : 2007.0.
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