BTC2881E3 Silicon NPN Epitaxial Planar Transistor

CYStech

Description

CYStech Electronics Corp.Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec.No.: C316E3 Issued Date : 2010.01.22 Revise.
High breakdown voltage, BVCEO≥ 200V. Large continuous collector current capability. Low collector saturation voltage.

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Datasheet Specifications

Part number: BTC2881E3
Manufacturer: CYStech
File Size: 190.93 KB
Datasheet: BTC2881E3-CYStech.pdf
Description: Silicon NPN Epitaxial Planar Transistor

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BTC2881E3 Silicon NPN Epitaxial Planar Transistor CYStech

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