BTC2881E3 Datasheet - CYStech

Silicon NPN Epitaxial Planar Transistor

BTC2881E3 General Description

* High breakdown voltage, BVCEO≥ 200V * Large continuous collector current capability * Low collector saturation voltage * RoHS compliant package Symbol BTC2881E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collec.

BTC2881E3 Datasheet (190.93 KB)

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BTC2881E3

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CYStech

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190.93 KB

Description:

Silicon npn epitaxial planar transistor.
CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec. No. : C316E3 Issued Date : 2010.01.22 Revise.

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BTC2881E3 General Description

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