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BTC2881E3 Silicon NPN Epitaxial Planar Transistor

BTC2881E3 Description

CYStech Electronics Corp.Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec.No.: C316E3 Issued Date : 2010.01.22 Revise.
High breakdown voltage, BVCEO≥ 200V. Large continuous collector current capability. Low collector saturation voltage.

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Datasheet Details

Part number
BTC2881E3
Manufacturer
CYStech
File Size
190.93 KB
Datasheet
BTC2881E3-CYStech.pdf
Description
Silicon NPN Epitaxial Planar Transistor

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Silicon NPN Epitaxial Planar Transistor CYStech
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