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BTD4512F3 Low Vcesat NPN Epitaxial Planar Transistor

BTD4512F3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Spec.No.: C821F3 Issued Date : 2011.12.02 Revised Date : Page No.: .
The device is manufactured in NPN planar technology by using a “Base Island” layout.

BTD4512F3 Features

* Very low collector-to-emitter saturation voltage
* Fast switching speed
* High current gain characteristic
* Large current capability

BTD4512F3 Applications

* CCFL drivers
* Voltage regulators
* Relay drivers
* High efficiency low voltage switching applications Symbol BTD4512F3 Outline TO-263 B：Base C：Collector E：Emitter BTD4512F3 BCE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821F3 Issued

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Datasheet Details

Part number
BTD4512F3
Manufacturer
CYStech
File Size
266.30 KB
Datasheet
BTD4512F3-CYStech.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

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Low Vcesat NPN Epitaxial Planar Transistor CYStech
CYStech BTD4512F3-like datasheet