* Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
* Excellent current gain characteristics
* Complementary to BTB1182J3 Symbol BTD1758J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage C
BTD1758J3 Datasheet (142.20 KB)
BTD1758J3
Cystech Electonics
142.20 KB
Npn epitaxial planar transistor.
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C842J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4
BTD17.
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