BTD1758J3 NPN Epitaxial Planar Transistor

Cystech Electonics

Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor Spec.No.: C842J3 Issued Date : 2003.05.25 Revised Date : Page No.: 1/4 BTD17.

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Datasheet Specifications

Part number: BTD1758J3
Manufacturer: Cystech Electonics
File Size: 142.20 KB
Datasheet: BTD1758J3_CystechElectonics.pdf
Description: NPN Epitaxial Planar Transistor

Features

* Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
* Excellent current gain characteristics
* Complementary to BTB1182J3 Symbol BTD1758J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage C

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1758J3 CYStek Product Specification

BTD1758J3 Distributors

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BTD1758J3 NPN Epitaxial Planar Transistor Cystech Electonics

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