BTD1782N3 Datasheet - CYStech

BTD1782N3 General Purpose NPN Epitaxial Planar Transistor

BTD1782N3 Features

* Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA

* High breakdown voltage, VCEO=80V (min.)

* Complements to BTB1198N3

* Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base

Datasheet Details

BTD1782N3

CYStech

185.32 KB

General purpose npn epitaxial planar transistor.

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