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BTD1782N3 - General Purpose NPN Epitaxial Planar Transistor

CYStech

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Datasheet Details

Part number: BTD1782N3
Manufacturer: CYStech
File Size: 185.32 KB
Datasheet: BTD1782N3-CYStech.pdf
Description: General Purpose NPN Epitaxial Planar Transistor

BTD1782N3 Product details

Description

The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Features

Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA.
High breakdown voltage, VCEO=80V (min. ).
Complements to BTB1198N3.
Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO.

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General Purpose NPN Epitaxial Planar Transistor CYStech

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