BTD1782N3 General Purpose NPN Epitaxial Planar Transistor

CYStech

Description

CYStech Electronics Corp.General Purpose NPN Epitaxial Planar Transistor BTD1782N3 Spec.No.: C304N3 Issued Date : 2006.06.12 Revised Date : 2007.1.
The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Low VCE(SAT), VCE(S.

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Datasheet Specifications

Part number: BTD1782N3
Manufacturer: CYStech
File Size: 185.32 KB
Datasheet: BTD1782N3-CYStech.pdf
Description: General Purpose NPN Epitaxial Planar Transistor

Features

* Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA
* High breakdown voltage, VCEO=80V (min. )
* Complements to BTB1198N3
* Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1782N3 CYStek Product Specification

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BTD1782N3 General Purpose NPN Epitaxial Planar Transistor CYStech

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