* Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA
* High breakdown voltage, VCEO=80V (min.)
* Complements to BTB1198N3
* Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base
BTD1782N3 Datasheet (185.32 KB)
BTD1782N3
CYStech
185.32 KB
General purpose npn epitaxial planar transistor.
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1782N3
Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.1.
📁 Related Datasheet
BTD1758J3 NPN Epitaxial Planar Transistor (Cystech Electonics)
BTD1760J3 NPN Epitaxial Planar Transistor (Cystech Electonics)
BTD1766M3 NPN Epitaxial Planar Transistor (Cystech Electonics)
BTD1768A3 NPN Epitaxial Planar Transistor (Cystech Electonics)
BTD1768BA3 NPN Transistor (Cystech Electonics Corp)
BTD1768M3 NPN Epitaxial Planar Transistor (CYStech)
BTD1768N3 NPN Epitaxial Planar Transistor (Cystech Electonics)
BTD1768S3 General Purpose NPN Epitaxial Planar Transistor (CYStech)
BTD1304A3 NPN Epitaxial Planar Transistor (CYStech)
BTD1304N3 NPN Epitaxial Planar Transistor (CYStech)
