BTD1760J3 - NPN Epitaxial Planar Transistor
BTD1760J3 Features
* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
* Excellent current gain characteristics
* Complementary to BTB1184J3
* Pb-free lead plating and halogen-free package Symbol BTD1760J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Orderi
