* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
* Excellent current gain characteristics
* Complementary to BTB1184J3
* Pb-free lead plating and halogen-free package Symbol BTD1760J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Orderi
BTD1760J3 Datasheet (299.64 KB)
BTD1760J3
Cystech Electonics
299.64 KB
Npn epitaxial planar transistor.
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : .
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