BTD6055J3 Datasheet - CYStech

BTD6055J3 Low Vcesat NPN Epitaxial Planar Transistor

BTD6055J3 Features

* Low VCE(SAT)

* Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A

* Low operating collector voltage

* Excellent current gain characteristics at very low VCE

* Suitable for low dropout voltage application

* Pb-free package Symbol BTD6055J3 Outline TO-

Datasheet Details

BTD6055J3

CYStech

235.38 KB

Low vcesat npn epitaxial planar transistor.

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