MTB010N06RH8 Description
CYStech Electronics Corp. 2019.04.08 Revised Date : 1/10 N-Channel Enhancement Mode Power MOSFET MTB010N06RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTB010N06RH8 Key Features
- Simple Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package