* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 43A 10.7 mΩ(typ) 16.9 mΩ(typ) Symbol MTB010N06RI3 Ou
MTB010N06RI3 Datasheet (599.54 KB)
MTB010N06RI3
CYStech
599.54 KB
N-channel mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB010N06RI3 Spec. No. : C016J3 Issued Date : 2018.05.24 Revised Date : Page No. : .
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