MTE130N20E3 - N-Channel Enhancement Mode Power MOSFET
MTE130N20E3 Features
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 159 mΩ(typ) Symbol MTE130N20E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information De
