* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 159 mΩ(typ) Symbol MTE130N20E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information De
MTE130N20E3 Datasheet (348.47 KB)
MTE130N20E3
CYStech
348.47 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20E3
Spec. No. : C966E3 Issued Date : 2015.05.06 Revised Date : Page No. : 1.
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