* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 139 mΩ(typ) Symbol MTE130N20F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information D
MTE130N20F3 Datasheet (398.14 KB)
MTE130N20F3
Cystech Electonics
398.14 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20F3
Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 1.
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