MTE010N10E3 Datasheet - Cystech Electonics

MTE010N10E3, N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.Spec.No.: C944E3 Issued Date : 2013.11.12 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTE010N1.

Features

* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package Symbol MTE010N10E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device Package MTE010N10E3-0-UB-S TO-220 (

MTE010N10E3-CystechElectonics.pdf