* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package Symbol MTE011N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D P
MTE011N10RH8 Datasheet (573.42 KB)
MTE011N10RH8
Cystech Electonics
573.42 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE011N.
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