MTE011N10RFP N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

📥 Download Datasheet

MTE011N10RFP Datasheet Preview — Preview of MTE011N10RFP PDF

Datasheet Specifications

Part number: MTE011N10RFP
Manufacturer: Cystech Electonics
File Size: 537.75 KB
Datasheet: MTE011N10RFP-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
* Low On Resistance RDS(ON)@VGS=10V, ID=11A
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 100V 34A 9A 11

MTE011N10RFP Distributors

📁 Related Datasheet

MTE030N15RH8 MTE100N10KRH8 MTE1011P MTE1040 MTE1050A MTE1070A

📌 All Tags

MTE011N10RFP N-Channel Enhancement Mode Power MOSFET Cystech Electonics

Cystech Electonics MTE011N10RFP-like datasheet