MTE011N10RFP Datasheet - Cystech Electonics

MTE011N10RFP, N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.Spec.No.: C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

Features

* ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
* Low On Resistance RDS(ON)@VGS=10V, ID=11A
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 100V 34A 9A 11

MTE011N10RFP-CystechElectonics.pdf