* ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
* Low On Resistance RDS(ON)@VGS=10V, ID=11A
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 100V 34A 9A 11
MTE011N10RFP Datasheet (537.75 KB)
MTE011N10RFP
Cystech Electonics
537.75 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOS.
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