MTE011N10RFP Datasheet - Cystech Electonics

MTE011N10RFP N-Channel Enhancement Mode Power MOSFET

MTE011N10RFP Features

* ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C

* Low On Resistance RDS(ON)@VGS=10V, ID=11A

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* Insulating package, front/back side insulating voltage=2500V(AC)

* RoHS compliant package 100V 34A 9A 11

Datasheet Details

MTE011N10RFP

Cystech Electonics

537.75 KB

N-channel enhancement mode power mosfet.

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