* RDSON(TYP) VGS=10V, ID=4.6A VGS=6V, ID=3.9A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package 150V 24.7A 5.5A 29.3mΩ 33.6mΩ Symbol MTE030N15RH8 G：Gat
MTE030N15RH8 Datasheet (540.29 KB)
MTE030N15RH8
CYStech Electronics
540.29 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE030N.
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