* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A 150V 28.7A 30 mΩ(typ) Symbol MTE030N15RJ3 Outline TO-252(DPAK) G：Gate D：Drai
MTE030N15RJ3 Datasheet (347.20 KB)
MTE030N15RJ3
Cystech Electonics
347.20 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE030N15RJ3
Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : .
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