Datasheet Details
- Part number
- MTE030N15RE3
- Manufacturer
- Cystech Electonics
- File Size
- 318.14 KB
- Datasheet
- MTE030N15RE3-CystechElectonics.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
MTE030N15RE3 Description
CYStech Electronics Corp.Spec.No.: C838E3 Issued Date : 2016.06.23 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N1.
MTE030N15RE3 Features
* Low Gate Charge
ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package
150V 36A
4.6A
33.3mΩ (typ)
Symbol
MTE030N15RE3
Outli
MTE030N15RE3 Applications
* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE030N15RE3
CYStek Product Specification
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