MTE030N15RE3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C838E3 Issued Date : 2016.06.23 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N1.

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Datasheet Specifications

Part number: MTE030N15RE3
Manufacturer: Cystech Electonics
File Size: 318.14 KB
Datasheet: MTE030N15RE3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.3mΩ (typ) Symbol MTE030N15RE3 Outli

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE030N15RE3 CYStek Product Specification

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MTE030N15RE3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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