* Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.3mΩ (typ) Symbol MTE030N15RE3 Outli
MTE030N15RE3 Datasheet (318.14 KB)
MTE030N15RE3
Cystech Electonics
318.14 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE030N1.
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