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MTE030N15RE3 - N-Channel Enhancement Mode Power MOSFET

MTE030N15RE3 Description

CYStech Electronics Corp.Spec.No.: C838E3 Issued Date : 2016.06.23 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N1.

MTE030N15RE3 Features

* Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.3mΩ (typ) Symbol MTE030N15RE3 Outli

MTE030N15RE3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE030N15RE3 CYStek Product Specification

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Datasheet Details

Part number
MTE030N15RE3
Manufacturer
Cystech Electonics
File Size
318.14 KB
Datasheet
MTE030N15RE3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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