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MTE300P10KN3 Datasheet - CYStech Electronics

MTE300P10KN3 P-Channel Enhancement Mode Power MOSFET

MTE300P10KN3 Features

* Low gate charge

* Compact and low profile SOT-23 package

* Advanced trench process technology

* High density cell design for ultra low on resistance

* ESD Protected Gate

* Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=

MTE300P10KN3 Datasheet (417.85 KB)

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Datasheet Details

Part number:

MTE300P10KN3

Manufacturer:

CYStech Electronics

File Size:

417.85 KB

Description:

P-channel enhancement mode power mosfet.

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MTE300P10KN3 P-Channel Enhancement Mode Power MOSFET CYStech Electronics

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