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MTE300P10KN3 - P-Channel Enhancement Mode Power MOSFET

MTE300P10KN3 Description

CYStech Electronics Corp.Spec.No.: C135N3 Issued Date : 2015.09.07 Revised Date : Page No.: 1/9 -100V P-Channel Enhancement Mode MOSFET MTE300P1.

MTE300P10KN3 Features

* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* ESD Protected Gate
* Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=

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Datasheet Details

Part number
MTE300P10KN3
Manufacturer
CYStech Electronics
File Size
417.85 KB
Datasheet
MTE300P10KN3-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech Electronics
CYStech Electronics MTE300P10KN3-like datasheet