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MTE011N10RE3 Datasheet - Cystech Electonics

MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET

MTE011N10RE3 Features

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 58A 9A 11 mΩ(typ) Symbol MTE011N10RE3 Outline TO-220 G：Gate D：Drain S：Source

MTE011N10RE3-CystechElectonics.pdf

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Datasheet Details

Part number:

MTE011N10RE3

Manufacturer:

Cystech Electonics

File Size:

525.54 KB

Description:

N-channel enhancement mode power mosfet.

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MTE011N10RE3 MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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