* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 58A 9A 11 mΩ(typ) Symbol MTE011N10RE3 Outline TO-220 G：Gate D：Drain S：Source
MTE011N10RE3 Datasheet (525.54 KB)
MTE011N10RE3
Cystech Electonics
525.54 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOS.
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