MTE011N10RE3 Datasheet - Cystech Electonics

MTE011N10RE3, N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.Spec.No.: C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 58A 9A 11 mΩ(typ) Symbol MTE011N10RE3 Outline TO-220 G：Gate D：Drain S：Source

MTE011N10RE3-CystechElectonics.pdf