MTE011N10RE3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTE011N10RE3
Manufacturer	Cystech Electonics
File Size	525.54 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE011N10RE3 Datasheet
Additional preview pages of the MTE011N10RE3 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 58A 9A 11 mΩ(typ) Symbol MTE011N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products.

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Published: Sep 4, 2016 |