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MTE011N10RJ3 Datasheet - Cystech Electonics

MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET

MTE011N10RJ3 Features

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252

MTE011N10RJ3-CystechElectonics.pdf

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Datasheet Details

Part number:

MTE011N10RJ3

Manufacturer:

Cystech Electonics

File Size:

550.65 KB

Description:

N-channel enhancement mode power mosfet.

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MTE011N10RJ3 MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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