* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252
MTE011N10RJ3 Datasheet (550.65 KB)
MTE011N10RJ3
Cystech Electonics
550.65 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9
N-Channel Enhancement Mode Power MOS.
📁 Related Datasheet
MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RFP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RH8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N08E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N08H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N10RJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE015N10QH8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
