MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No.: 1/ 9 N-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTE011N10RJ3
Manufacturer: Cystech Electonics
File Size: 550.65 KB
Datasheet: MTE011N10RJ3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252

MTE011N10RJ3 Distributors

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MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

Cystech Electonics MTE011N10RJ3-like datasheet