MTE011N10RJ3 Datasheet - Cystech Electonics

MTE011N10RJ3, N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.Spec.No.: C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No.: 1/ 9 N-Channel Enhancement Mode Power MOS.

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252

MTE011N10RJ3-CystechElectonics.pdf