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MTE110P10KQ8 P-Channel Enhancement Mode MOSFET

MTE110P10KQ8 Description

CYStech Electronics Corp.Spec.No.: C165Q8 Issued Date : 2015.09.24 Revised Date : Page No.: 1/9 P-Channel Enhancement Mode Power MOSFET MTE110P1.

MTE110P10KQ8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* ESD protected gate
* Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE110P

MTE110P10KQ8 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE110P10KQ8 CYStek Product Specification

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Datasheet Details

Part number
MTE110P10KQ8
Manufacturer
Cystech Electonics
File Size
385.16 KB
Datasheet
MTE110P10KQ8-CystechElectonics.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET Cystech Electonics
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