* Simple drive requirement
* Low on-resistance
* Fast switching speed
* ESD protected gate
* Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE110P
MTE110P10KQ8 Datasheet (385.16 KB)
MTE110P10KQ8
Cystech Electonics
385.16 KB
P-channel enhancement mode mosfet.
CYStech Electronics Corp.
Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTE110P1.
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