MTE130N20KJ3 - N-Channel Enhancement Mode Power MOSFET
MTE130N20KJ3 Features
* Low Gate Charge
* Simple Drive Requirement
* ESD Diode Protected Gate
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 142mΩ Symbol MTE130N20KJ3 Outline TO-252(DPAK) G：Gate D：
