* Low Gate Charge
* Simple Drive Requirement
* ESD Diode Protected Gate
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 143mΩ Symbol MTE130N20KE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering
MTE130N20KE3 Datasheet (307.98 KB)
MTE130N20KE3
CYStech
307.98 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20KE3
Spec. No. : C952E3 Issued Date : 2013.12.27 Revised Date : 2014.03.05 .
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