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MTE160P10L3 P-Channel Enhancement Mode Power MOSFET

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Description

CYStech Electronics Corp.Product Summary BVDSS RDS(ON) typ.@ VGS=-10V, ID=-2A ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C SOT-223 MTE160P10L3 P-C.

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Datasheet Specifications

Part number
MTE160P10L3
Manufacturer
CYStech
File Size
360.71 KB
Datasheet
MTE160P10L3-CYStech.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free Marking E160P10 YMXX Device Code Date Code Ordering Information Device MTE160P10L3-0-T3-G Package Shipping SOT-223 2500pcs / Tape & Reel 0: Product ra

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