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MTN2306N3 - N-Channel Enhancement Mode MOSFET

CYStech

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Datasheet Details

Part number	MTN2306N3
Manufacturer	CYStech
File Size	264.62 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	MTN2306N3-CYStech.pdf

MTN2306N3 Product details

Features

Lower gate charge.
Pb-free lead plating and Halogen-free package Equivalent Circuit MTN2306N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C, VGS=10V TA=70°C, VGS=10V ID 4.8 3.8 A Pulsed Drain Current IDM 20 (Note 1 & 2) A Power Dissipation TA=25°C TA=70°C PD 1.38 (Note 3) 0.

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Published: Jun 18, 2016 |