* VDS=20V RDS(ON)=30mΩ@VGS=4.5V, ID=5A RDS(ON)=40mΩ@VGS=2.5V, ID=2.6A
* Low on-resistance
* Low gate charge
* Excellent thermal and electrical capabilities
* Pb-free lead plating package RDSON(MAX) VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A 20V 6A 28
MTN2306ZN3 Datasheet (239.46 KB)
MTN2306ZN3
CYStech
239.46 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSF.
📁 Related Datasheet
MTN2306AM3 N-Channel MOSFET (CYStech)
MTN2306AN3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2306N3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2300AN3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2300N3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2302N3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2302S3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2302V3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2304M3 N-Channel Enhancement Mode MOSFET (CYStech)
MTN2304N3 N-Channel Enhancement Mode MOSFET (CYStech)
