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MTN2310N3 - N-Channel Enhancement Mode MOSFET

CYStech

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Datasheet Details

Part number: MTN2310N3
Manufacturer: CYStech
File Size: 469.60 KB
Datasheet: MTN2310N3-CYStech.pdf
Description: N-Channel Enhancement Mode MOSFET

MTN2310N3 Product details

Features

VDS=60V RDS(ON)=90mΩ(max. )@VGS=10V, IDS=3A RDS(ON)=120mΩ(max. )@VGS=4.5V, IDS=2A.
Simple drive requirement.
Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating.

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N-Channel Enhancement Mode MOSFET CYStech

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