MTN2310N3 N-Channel Enhancement Mode MOSFET

CYStech

Description

CYStech Electronics Corp.60V N-CHANNEL Enhancement Mode MOSFET MTN2310N3 Spec.No.: C393N3 Issued Date : 2007.10.24 Revised Date : Page No.: 1/6 .

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Datasheet Specifications

Part number: MTN2310N3
Manufacturer: CYStech
File Size: 469.60 KB
Datasheet: MTN2310N3-CYStech.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* VDS=60V RDS(ON)=90mΩ(max. )@VGS=10V, IDS=3A RDS(ON)=120mΩ(max. )@VGS=4.5V, IDS=2A
* Simple drive requirement
* Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Sourc

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2310N3 CYStek Product Specification

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MTN2310N3 N-Channel Enhancement Mode MOSFET CYStech

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