* VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A
* Simple drive requirement
* Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Sourc
MTN2310N3 Datasheet (469.60 KB)
MTN2310N3
CYStech
469.60 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET MTN2310N3 Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 1/6 .
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