NX5330SA LASER DIODE

California Eastern Labs

Description

LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS .
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode.

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Datasheet Specifications

Part number: NX5330SA
Manufacturer: California Eastern Labs
File Size: 167.52 KB
Datasheet: NX5330SA-CaliforniaEasternLabs.pdf
Description: LASER DIODE

Features

* High output power
* Long wavelength PO = 350 mW @ IFP = 1 000 mA
* 1
* C = 1 310 nm
* 1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10699EJ01V0DS (1st edition) Date Published January 2008 NS NX5330SA PACKAGE DIMENSION (UNIT: mm) 2 Data Sheet PL

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NX5330SA LASER DIODE California Eastern Labs

California Eastern Labs NX5330SA-like datasheet