NX5323EH LASER DIODE

California Eastern Labs

Description

LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE .
The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

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Datasheet Specifications

Part number: NX5323EH
Manufacturer: California Eastern Labs
File Size: 173.60 KB
Datasheet: NX5323EH-CaliforniaEasternLabs.pdf
Description: LASER DIODE

Features

* Optical output power
* Low threshold current
* Differential Efficiency
* InGaAs monitor PIN-PD
* CAN package
* Focal point Po = 13.0 mW lth = 7 mA ηd = 0.5 W/A
* Wide operating temperature range TC =
* 40 to +85°C φ 5.6 mm 6.35 mm

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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NX5323EH LASER DIODE California Eastern Labs

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