NE23300 Datasheet - California Eastern

Datasheet Details

Part number:

NE23300

Manufacturer:

California Eastern

File Size:

58.20 KB

Description:

SUPER LOW NOISE HJ FET

Features

* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 4.5 4.0 3.5 3.0 NF 2.5 2.0 1.5 1.0 0.5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18

* HIGH ASSOCIATED GAIN: 10.5 dB Typical at 1

NE23300-CaliforniaEastern.pdf

NE23300 Datasheet Preview — Preview of NE23300 PDF

NE23300, SUPER LOW NOISE HJ FET

The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility.

Its excellent low noise figure and high associated gain make it suitable for space applications.

NEC's stri

NE23300 Distributor

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