Datasheet4U Logo Datasheet4U.com

NE23300 Datasheet - California Eastern

SUPER LOW NOISE HJ FET

NE23300 Features

* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 4.5 4.0 3.5 3.0 NF 2.5 2.0 1.5 1.0 0.5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18

* HIGH ASSOCIATED GAIN: 10.5 dB Typical at 1

NE23300 General Description

The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for space applications. NEC's stri.

NE23300 Datasheet (58.20 KB)

Preview of NE23300 PDF

Datasheet Details

Part number:

NE23300

Manufacturer:

California Eastern

File Size:

58.20 KB

Description:

Super low noise hj fet.

📁 Related Datasheet

NE23383B SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET (California Eastern)

NE2001-VA20 Near edge thermal printhead (8 dots / mm) (Rohm)

NE2001-VA20A Near edge thermal printhead (8 dots / mm) (Rohm)

NE2002-VA10A Near edge thermal printhead (8 dots / mm) (Rohm)

NE2004-VA10A Near edge thin film thermal printhead (8 dots / mm) (Rohm)

NE202 ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

NE20248 ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

NE20283A ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

NE202930 Silicon NPN Epitaxial High Frequency Transistor (Renesas)

NE202XX ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

TAGS

NE23300 SUPER LOW NOISE FET California Eastern

Image Gallery

NE23300 Datasheet Preview Page 2 NE23300 Datasheet Preview Page 3

NE23300 Distributor