Part number:
3N165
Manufacturer:
Calogic LLC
File Size:
26.35 KB
Description:
Monolithic dual p-channel enhancement mode mosfet.
* CORPORATION
* Very High Impedance
* High Gate Breakdown
* Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3N165
Calogic LLC
26.35 KB
Monolithic dual p-channel enhancement mode mosfet.
📁 Related Datasheet
3N161 - DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
(Intersil Corporation)
.
3N163 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N163 - High Speed Switch
(Micross)
3N163 P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N163 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N164 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N164 - High Speed Switch
(Micross)
3N164 P-CHANNEL MOSFET
The 3N164 is an enhancement mode P-Channel Mosfet
The 3N164 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N164 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N165 - Amplifier
(Micross)
3N165 P-CHANNEL MOSFET
The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAX.
