3N190 Datasheet, Amplifier, Calogic LLC

3N190 Features

  • Amplifier CORPORATION
  • Very High Input Impedance
  • High Gate Breakdown 3N190-3N191
  • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless other

PDF File Details

Part number:

3N190

Manufacturer:

Calogic LLC

File Size:

27.48kb

Download:

📄 Datasheet

Description:

Dual p-channel enhancement mode mosfet general purpose amplifier.

Datasheet Preview: 3N190 📥 Download PDF (27.48kb)
Page 2 of 3N190

TAGS

3N190
Dual
P-Channel
Enhancement
Mode
MOSFET
General
Purpose
Amplifier
Calogic LLC

📁 Related Datasheet

3N190 - Amplifier (Micross)
3N190 P-CHANNEL MOSFET The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N190  LOW GATE LEA.

3N190 - Dual P-Channel MOSFET (Intersil)
Free Datasheet http://.. Free Datasheet http://.. .

3N191 - Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier (Calogic LLC)
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 / 3N191 FEATURES CORPORATION • Very High Input Impedance • High Gate Breakdow.

3N191 - Amplifier (Micross)
3N191 P-CHANNEL MOSFET The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N191  LOW GATE LEA.

3N191 - Dual P-Channel MOSFET (Intersil)
Free Datasheet http://.. Free Datasheet http://.. .

3N100E - MTB3N100E (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

3N1012 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N10L26 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N120-E3 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), l.

3N124 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

Stock and price

part
onsemi
IC CLK BUFFER 3.3V 1:19 72QFN
DigiKey
NB3N1900KMNTWG
799 In Stock
Qty : 500 units
Unit Price : $4.06
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts