2N3741A
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Pnp silicon power transistors. The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designe
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2N3741 - PNP Power Silicon Transistor
(VPT)
2N3740 & 2N3741
PNP Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/441
• Radiation Tolerant L.
2N3741 - Medium Power PNP Transistors
(Microsemi Corporation)
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
• • •
2N3741
Drivers Switches Me.
2N3741 - PNP SILICON POWER TRANSISTORS
(Central Semiconductor Corp)
2N3740 2N3740A 2N3741 2N3741A
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series.
2N3741 - MEDIUM-POWER PNP TRANSISTORS
(Motorola)
2N3740, A(SILICON) 2N3741, A
MEDIUM-POWER PNP TRANSISTORS
· .. ideal for use as drivers, switches and direct replacement of germanium medium·power de.
2N3741 - Bipolar PNP Device
(Seme LAB)
2N3741
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar PNP Device in a Herm.
2N3741 - PNP Power Silicon Transistor
(Aeroflex)
PNP Power Silicon Transistor
2N3740 & 2N3741
Features
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/441
• TO-66 (TO-213AA) Package
Max.
2N3741 - Silicon PNP Power Transistors
(Inchange Semiconductor)
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N3740 2N3741
DESCRIPTION With TO-66 package Excellent safe area limits L.
2N3741A - Medium Power PNP Transistors
(Microsemi Corporation)
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
• • •
2N3741A
Drivers Switches M.
2N3741A - MEDIUM-POWER PNP TRANSISTORS
(Motorola)
2N3740, A(SILICON) 2N3741, A
MEDIUM-POWER PNP TRANSISTORS
· .. ideal for use as drivers, switches and direct replacement of germanium medium·power de.
2N3741A - Silicon PNP Power Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device
.