2N6577
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Npn silicon power darlington transistor. The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switc
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2N657 - NPN Transistor
(Motorola)
2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switch.
2N657 - NPN SILICON PLANAR TRANSISTOR
(CDIL)
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N657
TO-39 Metal Can Package
General P.
2N6573 - Nipolar NPN Device
(Semelab Plc)
2N6573
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6573 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 250V(Min.) ·Fast Switching Speed ·High Current Capabilit.
2N6574 - Bipolar NPN Device
(Seme LAB)
2N6574
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6574 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capabilit.
2N6575 - Bipolar NPN Device
(Seme LAB)
2N6575
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6575 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 300V(Min.) ·Fast Switching Speed ·High Current Capabilit.
2N6576 - 15 AMPERE NPN DARLINGTON
(General Semiconductor)
.
2N6576 - NPN SILICON POWER DARLINGTON TRANSISTOR
(Central Semiconductor Corp)
2N6576 2N6577 2N6578
SILICON NPN DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6.
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