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1N5519B

SILICON ZENER DIODES

1N5519B General Description

The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNI.

1N5519B Datasheet (130.14 KB)

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1N5519B SILICON ZENER DIODES Central Semiconductor

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