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2N4416A Datasheet SILICON N-CHANNEL JFETS

Manufacturer: Central Semiconductor

Download the 2N4416A datasheet PDF. This datasheet also includes the 2N4416 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N4416-CENTRALSEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications.

MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS VDS IG PD TJ, Tstg 2N4416 30 2N4416A 35 30 35 30 35 10 300 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4416 SYMBOL TEST CONDITIONS MIN MAX IGSS VGS=20V, VDS=0 - 100 IGSS VGS=20V, VDS=0, TA=150°C - 100 IDSS VDS=15V, VGS=0 5.0 15 BVGSS IG=1.0μA 30 - VGS(off) VDS=15V, ID=1.0nA - 6.0 gFS VDS=15V, VGS=0, f=1.0kHz 4,500 7,500 gOS VDS=15V, VGS=0, f=1.0kHz - 50 Crss VDS=15V, VGS=0, f=1.0MHz - 1.0 Ciss VDS=15V, VGS=0, f=1.0MHz - 4.0 Coss VDS=15V, VGS=0, f=1.0MHz - 2.0 2N4416A MIN MAX - 100 - 100 5.0 15 35 2.5 6.0 4,500 7,500 - 50 - 1.0 - 4.0 - 2.0 UNITS V V V mA mW °C UNITS pA nA mA V V μS μS pF pF pF HIGH FREQUENCY CHARACTERISTICS: SYMBOL TEST CONDITIONS giss biss goss boss gfs Gps NF VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, ID=5.0mA VDS=15V, ID=5.0mA, RG=1.0kΩ 100MHz MIN MAX - 100 - 2,500 - 75 - 1,000 -18 - 2.0 400MHz MIN MAX - 1,000 - 10,000 - 100 - 4,000 4,000 10 - 4.0 UNITS μS μS μS μS μS dB dB R2 (4-June 2013) 2N4416 2N4416A SILICON N-CHANNEL JFETS TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate 4) Case MARKING: FULL PART NUMBER w w w.

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Overview

2N4416 2N4416A SILICON N-CHANNEL JFETS w w w.

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