Datasheet4U Logo Datasheet4U.com

2N4424 - SILICON NPN TRANSISTORS

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR 2N4424 is a silicon NPN epitaxial planar transistor designed for general purpose amplifier applications.

📥 Download Datasheet

Datasheet preview – 2N4424

Datasheet Details

Part number 2N4424
Manufacturer Central Semiconductor
File Size 293.11 KB
Description SILICON NPN TRANSISTORS
Datasheet download datasheet 2N4424 Datasheet
Additional preview pages of the 2N4424 datasheet.

📁 Similar Datasheet

  • 2N4424 - SILICON TRANSISTORS (ETC)
  • 2N442 - PNP Transistor (Motorola)
  • 2N4427 - Silicon Planar NPN Transistor (STMicroelectronics)
  • 2N4427 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
  • 2N4427 - Silicon planar epitaxial overlay transistors (NXP)
  • 2N4427 - SILICON NPN RF TRANSISTOR (Central Semiconductor Corp)
  • 2N4427 - HIGH FREQUENCY TRANSISTOR (Motorola)
  • 2N4427 - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
  • 2N4427 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
  • 2N4428 - NPN SILICON HIGH FREQUENCY TRANSISTOR (Advanced Semiconductor)
Other Datasheets by Central Semiconductor
  • 2N4400 - SILICON NPN TRANSISTORS
  • 2N4401 - SILICON NPN TRANSISTORS
  • 2N4402 - SILICON PNP TRANSISTORS
  • 2N4403 - SILICON PNP TRANSISTORS
  • 2N4410 - SILICON NPN TRANSISTORS
  • 2N4416 - SILICON N-CHANNEL JFETS
  • 2N4416A - SILICON N-CHANNEL JFETS
  • 2N4014 - SILICON NPN TRANSISTOR

Full PDF Text Transcription

Click to expand full text
2N4424 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4424 is a silicon NPN epitaxial planar transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 5.0 500 625 -65 to +150 200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=40V ICBO VCB=40V, TA=100°C ICES VCE=40V IEBO VEB=5.0V BVCBO IC=10μA 60 BVCEO IC=10mA 40 BVEBO IE=0.1μA 5.0 VCE(SAT) IC=50mA, IB=3.
Published: |