2N5823
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Complementary silicon transistor. The CENTRAL SEMICONDUCTOR 2N5822 and 2N5823 are epoxy molded complementary silicon small signal transistors manufactured by the epit
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2N5820 - COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
(Micro Electronics)
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2N5821 - COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
(Micro Electronics)
.
2N5822 - COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
(Micro Electronics)
.
2N5822 - COMPLEMENTARY SILICON TRANSISTOR
(Central Semiconductor)
2N5822 NPN 2N5823 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5822 and 2N5823.
2N5823 - COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
(Micro Electronics)
.
2N5829 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N4957 2N4958 2N4959 2N5829
2N4957 JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
MAXIMUM RATIN.
2N5800 - SILICON P-CHANNEL JUNCTION FET
(ETC)
2N5797 (SILICON)
thru
2N5800
SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS
Symmetrical depletion mode Junction Field·Effect Transistors de· sig.
2N5804 - Power Transistors
(RCA)
File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]5LJD
Solid State Division
Power Transistors
2N5804 2N5805
High-vol.
2N5804 - Bipolar NPN Device
(Seme LAB)
..
2N5804
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.1.
2N5804 - (2N5804 / 2N5805) Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High breakdown voltag.