2N5856
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Npn epoxy.
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2N5853 - PNP Transistor
(SSDI)
10 AMP NPN (continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
mhFiEn
mhaFEx
@Ic (A)
2N6562 2N6581 2N6590
10 450 10 40 5 10.
2N5854 - NPN Transistor
(SSDI)
10 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
2N3018 2N5049 2N2811 2N2812 2N3920 2N5083 2N5084 2N5622 2N5877 2N6387 2N2813 2N2814 2N4301.
2N5859 - NPN SILICON ANNULAR SWITCHING TRANSISTOR
(ETC)
2N5859 (SILICON)
NPN SILICON ANNULAR SWITCHING TRANSISTOR
designed for high·current, ligh·speed switching applications. Ideally suited for ferri.
2N5859 - NPN SILICON SWITCHING TRANSISTOR
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N5859 - SWITCHING TRANSISTOR
(Motorola)
)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation.
2N5800 - SILICON P-CHANNEL JUNCTION FET
(ETC)
2N5797 (SILICON)
thru
2N5800
SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS
Symmetrical depletion mode Junction Field·Effect Transistors de· sig.
2N5804 - Power Transistors
(RCA)
File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]5LJD
Solid State Division
Power Transistors
2N5804 2N5805
High-vol.
2N5804 - Bipolar NPN Device
(Seme LAB)
..
2N5804
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.1.
2N5804 - (2N5804 / 2N5805) Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High breakdown voltag.
2N5805 - Power Transistors
(RCA)
File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]5LJD
Solid State Division
Power Transistors
2N5804 2N5805
High-vol.
