CMPDM202PH Datasheet (Central Semiconductor) - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM202PH, SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM202PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications.

This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage

CMPDM202PH Features

* Low rDS(ON) (0.093Ω MAX @ VGS=2.5V)

* High current (ID=2.3A)

* Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 20 12 2.3 9.2 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MI