CMPDM203NH Datasheet (Central Semiconductor) - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM203NH, SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM203NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications.

This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage

CMPDM203NH Features

* Low rDS(ON) (0.07Ω MAX @ VGS=2.5V)

* High current (ID=3.2A)

* Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 20 12 3.2 12.8 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MI