CMPDM302PH Datasheet - Central Semiconductor

CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM302PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage.

CMPDM302PH Features

* Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)

* High current (ID=2.4A)

* Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 2.4 9.6 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MI

CMPDM302PH Datasheet (365.73 KB)

CMPDM302PH Datasheet Preview — Preview of CMPDM302PH PDF

Datasheet Details

Part number:

CMPDM302PH

Manufacturer:

Central Semiconductor ↗

File Size:

365.73 KB

Description:

Surface mount p-channel enhancement-mode silicon mosfet.

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CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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