Part number:
CMPDM302PH
Manufacturer:
File Size:
365.73 KB
Description:
Surface mount p-channel enhancement-mode silicon mosfet.
CMPDM302PH_CentralSemiconductor.pdf
Datasheet Details
Part number:
CMPDM302PH
Manufacturer:
File Size:
365.73 KB
Description:
Surface mount p-channel enhancement-mode silicon mosfet.
CMPDM302PH, SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
The CENTRAL SEMICONDUCTOR CMPDM302PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications.
This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage
CMPDM302PH Features
* Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)
* High current (ID=2.4A)
* Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 2.4 9.6 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MI
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