CMPDM302PH Datasheet (Central Semiconductor) - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM302PH, SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM302PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications.

This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage

CMPDM302PH Features

* Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)

* High current (ID=2.4A)

* Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 2.4 9.6 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MI