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CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM302PH Description

CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CMPDM302PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is.

CMPDM302PH Features

* Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)
* High current (ID=2.4A)
* Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 2.4 9.6 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MI

CMPDM302PH Applications

* This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 302C SOT-23F CASE APPLICATIONS:
* Load/Power switches
* Power supply converter circuits
* Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source V

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SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor
Central Semiconductor CMPDM302PH-like datasheet