Datasheet4U Logo Datasheet4U.com

CP337V Datasheet - Central Semiconductor

CP337V Small Signal Transistor

PROCESS CP337V Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY EPITAXIAL PLANAR 29 x 29 MILS 7.1 MILS 11.8 x 4.5 MILS 11.8 x 4.5 MILS Al - 30,000Å Au-As - 13,000Å GROSS DIE PER 4 INCH WAFER 13,192 PRINCIPAL DEVICE TYPES 2N3725A 2N4014 w w w. c e n t r a l s e m i . c o m R2 (29-June 2011) PROCESS CP337V Typical Electrical Characte.

CP337V Datasheet (942.36 KB)

Preview of CP337V PDF
CP337V Datasheet Preview Page 2 CP337V Datasheet Preview Page 3

Datasheet Details

📁 Related Datasheet

CP336V Small Signal Transistor (Central Semiconductor)

CP300 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)

CP300 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)

CP301 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)

CP301 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)

CP3010 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)

CP3010 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A (TRSYS)

CP302 SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) (Pan Jit International Inc.)

TAGS

CP337V Small Signal Transistor Central Semiconductor

CP337V Distributor