CP337V Datasheet (Central Semiconductor)

CP337V, Small Signal Transistor

PROCESS CP337V Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY EPITAXIAL PLANAR 29 x 29 MILS 7.1 MILS 11.8 x 4.5 MILS 11.8 x 4.5 MILS Al - 30,000Å Au-As - 13,000Å GROSS DIE PER 4 INCH WAFER 13,192 PRINCIPAL DEVICE TYPES 2N3725A 2N4014 w w w.

c e n t r a l s e m i .

c o m R2 (29-June 2011) PROCESS CP337V Typical Electrical Characte