CP307 Datasheet (Central Semiconductor) - Small Signal Transistor NPN

CP307, Small Signal Transistor NPN - Silicon Darlington Transistor Chip

PROCESS Small Signal Transistor CP307 NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 15,165 PRINCIPAL DEVICE TYPES 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA27 EPITAXIAL PLANAR 27 x 27 MILS 9.0 MILS 5.3 x 3.8 MILS 5.3 x 6.5 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR R6 (22-March 2010) w w