CP782X Datasheet - Central Semiconductor

CP782X PNP Transistor

PROCESS Small Signal Transistor CP782X PNP - Low VCE(SAT) Transistor Chip www.DataSheet4U.com PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 26 x 26 MILS 5.9 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 25,536 PRINCIPAL DEVICE TYPES CMLT7820G CMPT7820 CXT7820 R0 (9-September 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP782X Typical Electrical C.

CP782X_CentralSemiconductor.pdf