PROCESS General Purpose Rectifier 500mA Glass Passivated Rectifier Chip CPD04 www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 26 x 26 MILS 8.5 MILS 14 x 14 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 18,000 PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series R4 (22-March 2010) w w w.
c e n t r a l s e m i .
c o m PROCESS CPD04 Typical
