CPD109R Datasheet - centralsemi

CPD109R Low VFSchottky Diode

PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 8.3 x 8.3 MILS 3.9 MILS 5.4 x 5.4 MILS Al - 20,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 251,364 PRINCIPAL DEVICE TYPE CFSH01-30L R0 (13-April 2011) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD109R Typical Electrical Characteristics R0 (13-April 2011) w w w. c e n t r a l s e m i ..

CPD109R-centralsemi.pdf