CXDM1002N - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications.
This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.
MARKING: FULL PART NUMBER SOT-89 CASE APPL
CXDM1002N Features
* Low rDS(ON) (140mΩ TYP @ VGS=4.5V)
* High voltage (VDS=100V)
* Logic level compatibility
* 2kV ESD protection MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Di
