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CXDM1002N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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Description

CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver a.

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Features

* Low rDS(ON) (140mΩ TYP @ VGS=4.5V)
* High voltage (VDS=100V)
* Logic level compatibility
* 2kV ESD protection MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Di

Applications

* This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS:
* Load/Power switches
* Power supply converter circuits

CXDM1002N Distributors

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