CXDM1002N Datasheet - Central Semiconductor

SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CXDM1002N Features

* Low rDS(ON) (140mΩ TYP @ VGS=4.5V)

* High voltage (VDS=100V)

* Logic level compatibility

* 2kV ESD protection MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Di

CXDM1002N General Description

The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPL.

CXDM1002N Datasheet (359.55 KB)