CXDM6053N - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications.
This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.
SOT-89 CASE APPLICATIONS: * Load/
CXDM6053N Features
* Low rDS(ON) (52mΩ MAX @ VGS=4.5V)
* High current (ID=5.3A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage
