CXDM6053N Datasheet - Central Semiconductor

CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS: * Load/.

CXDM6053N Features

* Low rDS(ON) (52mΩ MAX @ VGS=4.5V)

* High current (ID=5.3A)

* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage

CXDM6053N-CentralSemiconductor.pdf