CXDM6053N Datasheet, Mosfet, Central Semiconductor

CXDM6053N Features

• Mosfet
• Low rDS(ON) (52mΩ MAX @ VGS=4.5V)
• High current (ID=5.3A)
• Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Co

PDF File Details

Part number:

CXDM6053N

Manufacturer:

Central Semiconductor ↗

File Size:

131.72kb

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📄 Datasheet

Description:

Surface mount n-channel enhancement-mode silicon mosfet. The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed ampl

CXDM6053N Application

• Applications This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS:
• Loa

TAGS

CXDM6053N

Central Semiconductor

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