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CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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Description

CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver.

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Features

* Low rDS(ON) (52mΩ MAX @ VGS=4.5V)
* High current (ID=5.3A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage

Applications

* This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS:
* Load/Power switches
* Power supply converter circuits

CXDM6053N Distributors

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