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CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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Description

CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver.

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Features

* Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
* High current (ID=6.9A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage

Applications

* This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS:
* Load/Power switches
* Power supply converter circuits

CXDM3069N Distributors

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